- JEDEC Standard
- DDR4 Speed Grade : 2133 Mbps
- Unbuffered DIMM : 288-pin
- 16 internal banks; 4 groups of 4 banks each
- Memory Organization : x8 FBGA DRAM chip
- CAS latency : CL15
- Bandwidth : 17000MB/s
- Data bus inversion (DBI) for data bus
- VDD voltage : 1.2V
- VDDQ voltage : 1.2V
- VPP voltage: 2.5V
- Serial presence detect with EEPROM
- PCB height : 1.23 inch (31.25mm)
- RoHS Compliant

Memory clock speed:

2133 MHz

Compatible chipsets:

Intel® H110

Memory channels:

Dual

Row cycle time:

46.5 ns

Buffered memory type:

Unregistered (unbuffered)

ECC:

Internal memory:

8 GB

RoHS compliance:

JEDEC standard:

Yes

Programming power voltage (VPP):

2.5 V

Row active time:

33 ns

Memory bandwidth (max):

17 GB/s

Memory layout (modules x size):

1 x 8 GB

CAS latency:

Memory voltage:

1.2 V

Refresh row cycle time:

260 ns

Storage temperature (T-T):

-55 - 100 °C

Operating temperature (T-T):

0 - 85 °C

Width:

133 mm

Height:

31 mm

Weight:

18 g

Chips organisation:

x8 FBGA DRAM chip

Warnings:

Protect from extreme temperatures., Do not open the memory module housing., Dispose of in accordance with local regulations for electronic waste.

AFOX DDR4 8G 2133 UDIMM memory module 8 GB 2133 MHz

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